Equipment Used in Semiconductor Manufacturing Processes and Evaluation Examples

Significance of the topic

Semiconductor manufacturing involves hundreds of interdependent steps from wafer fabrication to final packaging. Precise analysis and control of surface properties, contamination levels, film composition, and process gases are essential to maximize yield, reliability, and device performance. Modern fabs demand versatile analytical platforms capable of high sensitivity, spatial resolution, and rapid throughput to address challenges at the micro- and nanoscale.

Study objectives and overview

This whitepaper provides an integrated overview of Shimadzu’s analytical and measurement solutions tailored for semiconductor processes. It surveys instrument applications across key production stages—wafer manufacturing, polishing, lithography, etching, cleaning, plating, bonding, dicing, and packaging—highlighting demonstrated performance in defect analysis, process monitoring, and material characterization.

Methodology and instrumentation

Analyses span multiple physical and chemical techniques:

• Surface and thin-film characterization: Atomic force microscopy (SPM Series), X-ray photoelectron spectroscopy (KRATOS ULTRA2), angle-resolved XPS with MEM, Raman microscopy (AIRsight), infrared spectroscopy (IRTracer-100), X-ray CT (Xslicer SMX-6010)
• Optical measurements: UV-VIS-NIR spectrophotometry (UV-3600i Plus), FTIR (FTIR/DUH), UV transmittance for purified water
• Particle and contamination analysis: Dynamic particle image analysis (iSpect DIA-10), laser diffraction (SALD), gas chromatography (GC, GCMS-QP2020 NX), TOC analyzers (TOC-L, TOC-1000e)
• Elemental and compositional analysis: EPMA (EPMA-8050G), EDX-FTIR integrated analysis (EDXIR-Analysis), LCMS (LCMS-TQ RX), ICP, HPLC, AA
• Mechanical and fluid properties: Capillary rheometry (CFT-EX Series), microcompression tests, static testing machines for tape peel and bonding strength
• Process-gas and trace analysis: High-sensitivity moisture measurement in N₂ (GC), FTIR gas-cell analysis for siloxanes and etch precursors

Main results and discussion

• Surface roughness on silicon wafers was quantified at subnanometer resolution (Ra ≈ 0.14 nm) using SPM without sample pretreatment.
• Band-gap energies of polycrystalline silicon were determined with enhanced sensitivity by adding a third detector in UV-VIS-NIR spectrophotometry.
• Total organic carbon in high-purity sulfuric acid was measured with recovery rates near 100% down to 1 mg C/L.
• Angle-resolved XPS coupled with maximum entropy analysis mapped chemical states through multilayer thin films with ~10 nm depth resolution.
• Rapid-scan FTIR tracked UV-curing resin reactions at 20 spectra/s, revealing polymerization kinetics.
• Trace moisture in nitrogen was detected at sub-ppm levels using GC with S/N > 6000.
• Dynamic particle analysis and laser diffraction characterized abrasive and contaminant particle size distributions for CMP slurries and polishing materials.
• X-ray CT imaging located voids in solder and BGA joints, enabling quantitative void-ratio calculations.

Benefits and practical applications

• Real-time process monitoring: Rapid data acquisition for cleaning, etch, and deposition steps reduces cycle times and prevents yield loss.
• Quality assurance: Quantitative metrics for roughness, film thickness, and contamination support robust QA/QC protocols.
• Materials development: Depth-profiled chemical analysis and rheological measurements guide engineered substrate and slurry formulations.
• Equipment maintenance: Particle and gas impurity monitoring extend pump life and optimize evacuation systems.
• Failure analysis: Multimodal imaging (X-ray CT, EPMA, Raman) provides root-cause identification for device defects.

Future trends and possible uses

• Integration of multimodal instruments into compact platforms for correlative analysis of organic and inorganic contaminants.
• Implementation of AI-driven data analytics to predict process drift and enable adaptive control in real time.
• Expansion of in-situ and on-line monitoring solutions to capture dynamic reaction kinetics during deposition and curing.
• Development of ultra-trace detection methods for emerging contaminants such as PFAS in process water and effluents.
• Miniaturization of spectroscopic sensors for embedded monitoring within process chambers and equipment lines.

Conclusion

Shimadzu’s broad portfolio of analytical and measuring instruments addresses critical monitoring and characterization needs across the semiconductor manufacturing workflow. By combining high sensitivity, spatial resolution, and rapid analysis, these solutions help fabs improve yield, reduce downtime, and drive innovation in materials and process development.

References

No external references were provided in the source document.